Skip to Main Content
Contact
English
  • English
  • 简体中文

PTVA047002EV-V1

High Power RF LDMOS FET 700 W; 50 V; 470 – 806 MHz

The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Products

PTVA047002EV-V1

No filters selected, showing all 1 products

PTVA047002EV-V1

Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA047002EV-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
700 W
17.5 dB
29%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Integrated ESD protection
  • Low thermal resistance
  • High gain
  • Thermally enhanced package
  • RoHS compliant
  • Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
Applications
  • Power Amplifiers in the 470 to 806 MHz frequency band

Documents, Tools & Support

Documents

Document Type
Document Name
Data Sheets
Product Catalog
Sales Terms
Buy OnlineFind a Distributor

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Instagram
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.