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PTVA101K02EV-V1

High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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PTVA101K02EV-V1

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PTVA101K02EV-V1

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA101K02EV-V1
Yes
LDMOS
1.03 GHz
1.09 GHz
900 W
18 dB
65%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Broadband input matching
  • High gain and effi ciency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition; (32μS ON / 18μS OFF) X 80;LTDF = 6.4%.
Applications
  • Power Amplifiers in the 1030 to 1090 MHz frequency band

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Thermal Considerations for High-Power GaN RF Amplifiers

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