(中文) GaN on SiC for RF S-Band Radar Applications

S-Band

产品SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA0060002F1-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Evaluation Board	Flange
CMPA0060002F1	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Packaged MMIC	Flange
CMPA0060002F-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	23%	28 V	Evaluation Board	Flange
CMPA0527005F	Yes	GaN on SiC	0.5 GHz	2.4 GHz	5 W	20 dB	47%	50 V	Packaged MMIC	Flange
CMPA0527005F-AMP1	Yes	GaN on SiC	0.5 GHz	2.7 GHz	5 W	20 dB	47%	50 V	Evaluation Board	Flange
CGHV1F006S	Yes	GaN on SiC	DC	15 GHz	6 W	>7 dB	52%	40 V	Packaged Discrete Transistor	Surface Mount
CGH40006S-AMP1	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Surface Mount
CGH40006P-AMP	Yes	GaN on SiC	2 GHz	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Pill
CGH40006S	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Plastic
CGH40006P	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH60008D-GP4	Yes	GaN on SiC	DC	6 GHz	8 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CG2H40010F-AMP	Yes	GaN on SiC	3.5 GHz	3.9 GHz	10 W	>16 dB	65%	28 V	Evaluation Board	Flange
CGH40010F-AMP	No	GaN on SiC	3.5 GHz	3.9 GHz	10 W	>14 dB	65%	28 V	Evaluation Board	Flange
CG2H40010F	Yes	GaN on SiC	DC	6 GHz	10 W	>16 dB	65%	28 V	Packaged Discrete Transistor	Flange
CGH40010F	No	GaN on SiC	DC	6 GHz	10 W	>14 dB	65%	28 V	Packaged Discrete Transistor	Flange
CMPA2735015S	Yes	GaN on SiC	2.7 GHz	3.5 GHz	15 W	33 dB	50%	50 V	Packaged MMIC	Plastic
CGHV27015S	Yes	GaN on SiC	DC	6 GHz	15 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CGH27015F-AMP	Yes	GaN on SiC	2.3 GHz	2.7 GHz	15 W	14.5 dB	28%	28 V	Evaluation Board	Flange
CMPA0060025F1-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F1	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CGHV1F025S	Yes	GaN on SiC	DC	15 GHz	25 W	11 dB	51%	40 V	Packaged Discrete Transistor	Surface Mount
CG2H40025F-AMP	Yes	GaN on SiC	3.4 GHz	3.8 GHz	25 W	>15 dB	62%	28 V	Evaluation Board	Flange
CMPA2560025F	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Packaged MMIC	Flange
CG2H40025F	Yes	GaN on SiC	DC	6 GHz	25 W	>15 dB	62%	28 V	Packaged Discrete Transistor	Flange
CMPA2560025F-AMP	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Evaluation Board	Flange
CMPA0060025F-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CGH40025P	No	GaN on SiC	DC	6 GHz	25 W	>13 dB	62%	28 V	Packaged Discrete Transistor	Pill
CMPA2735030S	Yes	GaN on SiC	2.7 GHz	3.5 GHz	30 W	32 dB	45%	50 V	Discrete Bare Die	Surface Mount
CGHV27030S-AMP1	Yes	GaN on SiC	2.5 GHz	2.7 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S	Yes	GaN on SiC	DC	6 GHz	30 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CGHV40030F	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Flange
CGH27030S-AMP1	Yes	GaN on SiC	1.8 GHz	2.2 GHz	30 W	18 dB	33%	28 V	Evaluation Board	Surface Mount
CGH27030S	Yes	GaN on SiC	DC	6 GHz	30 W	18 dB	33%	28 V	Packaged Discrete Transistor	Surface Mount
CGH55030P1	Yes	GaN on SiC	DC	6 GHz	30 W	10 dB	25%	28 V	Packaged Discrete Transistor	Pill
CGHV40030F-AMP2	Yes	GaN on SiC	0.5 GHz	2.7 GHz	30 W	16 dB	70%	50 V	Evaluation Board	Flange
CGHV40030P	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Pill
CGH27030F-AMP	Yes	GaN on SiC	DC	6 GHz	30 W	15 dB	28%	28 V	Evaluation Board	Flange
CGH27030P	Yes	GaN on SiC	DC	6 GHz	30 W	15 dB	28%	28 V	Packaged Discrete Transistor	Pill
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA2060035F-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Evaluation Board	Flange
CGH40035F-AMP	No	GaN on SiC	3.3 GHz	3.7 GHz	35 W	>13 dB	60%	28 V	Evaluation Board	Flange
CG2H40035F-AMP	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Evaluation Board	Flange
CG2H40035F	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Packaged MMIC	Flange
CGH40035F	No	GaN on SiC	DC	6 GHz	35 W	>13 dB	60%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F-AMP1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	32 V	Evaluation Board	Flange
CGH40045F-AMP	No	GaN on SiC	2.3 GHz	2.7 GHz	45 W	>12 dB	55%	28 V	Evaluation Board	Flange
CG2H40045F-AMP	Yes	GaN on SiC	2.3 GHz	2.7 GHz	45 W	>14 dB	55%	28 V	Evaluation Board	Flange
CG2H40045F	Yes	GaN on SiC	DC	4 GHz	45 W	>14 dB	55%	28 V	Packaged Discrete Transistor	Flange
CGH40045P	No	GaN on SiC	DC	4 GHz	45 W	>12 dB	55%	28 V	Packaged Discrete Transistor	Pill
CGHV40050F	Yes	GaN on SiC	DC	4 GHz	50 W	16 dB	53%	50 V	Packaged Discrete Transistor	Flange
CGHV40050P	Yes	GaN on SiC	DC	4 GHz	50 W	16 dB	53%	50 V	Packaged Discrete Transistor	Pill
CMPA5259050D1 New	Yes	GaN on SiC	5 GHz	5.9 GHz	60 W	23 dB	50%	28 V	MMIC Bare Die	Die
CGHV27060MP	Yes	GaN on SiC	DC	2.7 GHz	60 W	16.5 dB	64%	50 V	Packaged Discrete Transistor	Plastic
CGHV27060MP-AMP1	Yes	GaN on SiC	2.5 GHz	2.7 GHz	60 W	16.5 dB	64%	50 V	Evaluation Board	Plastic
CMPA2735075F1	Yes	GaN on SiC	2.7 GHz	3.5 GHz	75 W	29 dB	57%	28 V	Packaged MMIC	Flange
CMPA3135060S	Yes	GaN on SiC	3.1 GHz	3.5 GHz	75 W	20 dB	55%	50 V	Packaged MMIC
CMPA2738060F-AMP	Yes	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	54%	50 V	Evaluation Board	Flange
CMPA2738060F	Yes	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	54%	50 V	Packaged MMIC	Flange
CG2H30070F-AMP2	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Evaluation Board	Flange
CG2H30070F	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Packaged Discrete Transistor	Flange
CGH40090PP-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	90 W	>14 dB	55%	28 V	Evaluation Board	Push-Pull
CMPA5259100S New	Yes	GaN on SiC	5 GHz	5.9 GHz	100 W	25 dB		50 V	Packaged MMIC	Surface Mount
CGHV40100F-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	100 W	17.5 dB	55%	50 V	Evaluation Board	Flange
CGHV40100F	Yes	GaN on SiC	DC	3 GHz	100 W	17.5 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV40100P-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	100 W	17.5 dB	55%	50 V	Evaluation Board	Pill
CGHV40100P	Yes	GaN on SiC	DC	3 GHz	100 W	17.5 dB	55%	50 V	Packaged Discrete Transistor	Pill
CG2H80120D-GP4	Yes	GaN on SiC	DC	8 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGH60120D-GP4	No	GaN on SiC	DC	6 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGHV35120F	Yes	GaN on SiC	3.1 GHz	3.5 GHz	120 W	12.8 dB	62%	50 V	Packaged Discrete Transistor	Flange
CMPA2935150S-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CMPA2935150S	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CGHV35150F-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	50%		Evaluation Board	Flange
CGHV35150F	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	50%	50 V	Packaged Discrete Transistor	Flange
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
CGH35240F-AMP	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGH35240F	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGHV40320D-GP4	Yes	GaN on SiC	DC	4 GHz	320 W	19 dB	65%	50 V	Discrete Bare Die	Die
CGHV38375F	Yes	GaN on SiC	2.75 GHz	3.75 GHz	400 W	>10 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV35400F-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	60%	50 V	Evaluation Board	Flange
CGHV35400F	Yes	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	60%	50 V	Packaged Discrete Transistor	Flange
CGHV31500F1-AMP	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Evaluation Board	Flange
CGHV31500F1	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Packaged Discrete Transistor	Flange
CGHV35400F1	Yes	GaN on SiC	2.9 GHz	3.5 GHz	500 W	12 dB	60%	50 V	Packaged Discrete Transistor	Flange
CGHV31500F-AMP	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	60%	50 V	Evaluation Board	Flange
CGHV31500F	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	60%	50 V	Packaged Discrete Transistor	Flange

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Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Improving Pulse Fidelity in RF Power Amplifiers

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.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Thermal Considerations for High-Power GaN RF Amplifiers

Thermal Considerations for High-Power GaN RF Amplifiers