Features
- 3.1 – 3.5 GHz Operation
- 75 W Typical Output Power
- 29 dB Power Gain
- 50-ohm Matched for Ease of Use
- Plastic Surface-Mount Package; 7×7 mm QFN
CMPA3135060S
3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier
Wolfspeed’s CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach; enabling high power and power added efficiency to be achieved in a 7mm x 7mm; surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.
Products
CMPA3135060S
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Applications
- Air Traffic Control Radar
- Defense Surveillance Radar
- Fire Control Radar
- Military Air; Land and Sea Radar
- Weather Radar
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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| Design Files | |
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| Application Notes | |
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| Data Sheets | |
| S-parameters | |
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Simon M. Wood – Ulf Andre – Bradley J. Millon – and Jim Milligan – This paper presents the design – development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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