(中文) GaN on SiC solutions for pulsed & CW X-Band applications

X-Band

产品SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CGHV1F006S-AMP3	Yes	GaN on SiC	8.5 GHz	9.6 GHz	6 W	>7 dB	52%	40 V	Evaluation Board	Surface Mount
CGHV1F006S	Yes	GaN on SiC	DC	15 GHz	6 W	>7 dB	52%	40 V	Packaged Discrete Transistor	Surface Mount
CGHV1J006D-GP4	Yes	GaN on SiC	DC	18 GHz	6 W	17 dB	60%	40 V	Discrete Bare Die	Die
CGHV1F025S-AMP1	Yes	GaN on SiC	8.9 GHz	9.6 GHz	25 W	11 dB	51%	40 V	Evaluation Board	Surface Mount
CGHV1F025S	Yes	GaN on SiC	DC	15 GHz	25 W	11 dB	51%	40 V	Packaged Discrete Transistor	Surface Mount
CMPA601C025F-AMP	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Evaluation Board	Flange
CMPA601C025F	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Packaged MMIC	Flange
CGHV1J025D-GP4	Yes	GaN on SiC	DC	18 GHz	25 W	17 dB	60%	40 V	Discrete Bare Die	Die
CMPA601C025D	Yes	GaN on SiC	6 GHz	12 GHz	25 W	32 dB	32%	28 V	MMIC Bare Die	Die
CMPA901A020S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	30 dB	45%	28 V	Packaged MMIC	Plastic
CMPA9396025S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	45%	40 V	Evaluation Board	Plastic
CMPA801B030F1	Yes	GaN on SiC	8 GHz	12 GHz	35 W	19 dB	36%	28 V	Packaged MMIC	Flange
CMPA9396025S	Yes	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	45%	40 V	Packaged MMIC	Plastic
CMPA901A020S	Yes	GaN on SiC	9 GHz	10 GHz	35 W	30 dB	45%	28 V	Packaged MMIC	Plastic
CMPA901A035F1	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	38%	28 V	Packaged MMIC	Flange
CMPA801B030D1	Yes	GaN on SiC	8 GHz	11 GHz	40 W	28 dB	42%	28 V	MMIC Bare Die	Die
CMPA901A035F-AMP	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Evaluation Board	Flange
CMPA901A035F	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Packaged MMIC	Flange
CMPA801B030S	Yes	GaN on SiC	7.9 GHz	11 GHz	40 W	27 dB	40%	28 V	Packaged MMIC	Plastic
CMPA851A050F New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	50 W	29 dB		28 V	Packaged MMIC	Flange
CGHV96050F2-AMP	Yes	GaN on SiC	8.4 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Evaluation Board	Flange
CGHV96050F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Packaged Discrete Transistor	Flange
CGHV1J070D-GP4	Yes	GaN on SiC	DC	18 GHz	70 W	17 dB	60%	40 V	Discrete Bare Die	Die
CMPA851A050S New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	Packaged MMIC	Surface Mount
CMPA851A050D New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	MMIC Bare Die	Die
CGHV96100F2-AMP	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Evaluation Board	Flange
CGHV96100F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Packaged Discrete Transistor	Flange
CGHV96130F	Yes	GaN on SiC	8.4 GHz	9.6 GHz	130 W		42%	40 V	Packaged Discrete Transistor	Flange

Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.

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Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Improving Pulse Fidelity in RF Power Amplifiers

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.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Thermal Considerations for High-Power GaN RF Amplifiers

Thermal Considerations for High-Power GaN RF Amplifiers