Continue Reading Technical Articles
射频产品
卫星通讯
Wolfspeed 提供支持卫星通讯的高效率、高增益碳化硅基氮化镓器件，以多载波流（每兆赫最快比特/秒的传输速率）实现全视频带宽。这些器件还提供卓越的热特性：通过更有效地散热，碳化硅基氮化镓可以在更低温度下工作。凭借涵盖射频功能的产品组合以及业界领先的更高可靠性，Wolfspeed 是帮助开发下一代卫星通讯解决方案的首选合作伙伴。
Products
No filters selected, showing all 16 products
Products - Filter By
Products
产品SKU | 在线购买 | 索取样品 | 数据手册 | CAD模型 | 新设计推荐？ | 技术 | 频率（最小值） | 频率（最大值） | 峰值输出功率 | 增益 | 效率 | 工作电压 | 类型 | 封装类型 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA1D1J001S-AMP1 New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA1D1J001S New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA1D1E025F-AMP | Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Evaluation Board | Flange | ||||
CMPA1D1E025F | Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Packaged MMIC | Flange | ||||
CMPA5585030F-AMP | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA5585030F | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA5585030D | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 30 dB | 44% | 28 V | MMIC Bare Die | Die | ||||
CMPA1D1E030D | Yes | GaN on SiC | 13.75 GHz | 14.5 GHz | 30 W | 26 dB | 25% | 40 V | MMIC Bare Die | Die | ||||
CGHV96050F1-AMP | Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Evaluation Board | Flange | ||||
CGHV96050F1 | Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Packaged Discrete Transistor | Flange | ||||
CMPA1H1J050F-AMP New | Yes | GaN on SiC | 17.3 GHz | 18.4 GHz | 60 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA1H1J050F New | Yes | GaN on SiC | 17.3 GHz | 18.4 GHz | 60 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA1C1D060D | Yes | GaN on SiC | 12.7 GHz | 13.25 GHz | 65 W | 26 dB | 30% | 40 V | MMIC Bare Die | Die | ||||
CMPA1C1D080F | No | GaN on SiC | 12.75 GHz | 13.25 GHz | 90 W | 25 dB | 30% | 40 V | Packaged MMIC | Flange | ||||
CGHV50200F-AMP | Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Evaluation Board | Flange | ||||
CGHV50200F | Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Packaged Discrete Transistor | Flange |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading Technical Articles