Features
- 26 dB Small Signal Gain
- 60 W Typical PSAT
- Operation up to 40 V
- High Breakdown Voltage
- High Temperature Operation
CMPA1C1D060D
60-W; 12.7 to 13.25-GHz; 40-V; GaN MMIC Power Amplifier
Wolfspeed’s CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.
Products
CMPA1C1D060D
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CMPA1C1D060D
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA1C1D060D | Yes | GaN on SiC | 12.7 GHz | 13.25 GHz | 65 W | 26 dB | 30% | 40 V | MMIC Bare Die | Die |
Applications
- Satellite Communications Uplink
- PTP Radio
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp. Benjamin M. Decker – Northrop Grumman Corp. |
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
Knowledge Center
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