Webinar: New G28V5 Process Provides Ka-Band GaN MMIC Capability

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.

Consumer demands are pushing the limits of what is possible with the modern-day semiconductor — which is why Wolfspeed is focused on creating solutions that will power the technology of the future.

As semiconductor materials go, wide bandgap technologies are not only enabling new growth in application markets but pushing through the inertia of entrenched technologies. RF gallium nitride (GaN), particularly when implemented as GaN on silicon carbide (SiC) substrate, stands out as being the best suited for high-power applications.