クリー社　シリコンカーバイドを使ったパワーエレクトロニクス回路設計ガイダンス

Silicon Carbide now has optimized tools and models available from various suppliers, and standard modeling mitigations can be applied. While there are differences between tools like LTSpice, PLECS, and Wolfspeed’s SpeedFit 2.0 Design Simulator™, tips from Wolfspeed’s Power experts will help achieve simulation accuracy with SiC.

In high power applications, Silicon Carbide MOSFETs can enable lower losses with faster switching speeds than their silicon counterparts, and to maximize those gains you’ll need to drive them effectively. Learn more about the nuances of designing SiC gate drive circuits in the next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power: Gate Drive Considerations.

Learn how the considerations for silicon and silicon carbide differ and the simple steps to take advantage of silicon carbide's high efficiency and power density. The next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power webinar series focuses on modeling common topologies using SiC MOSFETs.