Webセミナー：シリコンカーバイドパワーの設計者ガイドーシミュレーション

Now that silicon carbide has been established as a transformative technology, many power designers are focusing on SiC device level qualification, reliability and consistency of supply. Wolfspeed is leading the pack with comprehensive proven product reliability across its entire vertical supply chain, ensuring that the unprecedented market demand for SiC can be realized throughout the next decade and beyond.

Silicon Carbide now has optimized tools and models available from various suppliers, and standard modeling mitigations can be applied. While there are differences between tools like LTSpice, PLECS, and Wolfspeed’s SpeedFit 2.0 Design Simulator™, tips from Wolfspeed’s Power experts will help achieve simulation accuracy with SiC.

In high power applications, Silicon Carbide MOSFETs can enable lower losses with faster switching speeds than their silicon counterparts, and to maximize those gains you’ll need to drive them effectively. Learn more about the nuances of designing SiC gate drive circuits in the next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power: Gate Drive Considerations.