Silicon carbide (SiC) Schottky diodes have higher efficiency, reliability and performance capabilities when compared to their silicon counterparts. Schottky diodes manufactured with silicon experience a higher reverse leakage current as temperatures increase, which leads to thermal instability within the device and can restrict the diode’s reverse voltage rating. SiC technology, on the other hand, gives the Schottky diode higher conducting performance at increased temperatures and frequencies and provides lower reverse leakages and switching losses. The design and operating characteristics of SiC Schottky diodes support some of the most advanced power converters available on the market.
The needs of power electronics have continued to evolve in recent years, increasing the demand for components and systems that are smaller and more efficient while still being more powerful. The design of Schottky diodes has evolved alongside this demand in order to meet this challenge. The current model of SiC Schottky diodes features the most compact structure with the highest resistance to high voltages under reverse bias.
Wolfspeed’s Schottky diodes are manufactured with a Merged PIN Schottky (MPS) design, which guarantees a high-performing electronic system. An MPS design is more robust and reliable than a basic Schottky barrier diode (SBD) structure and a Junction Barrier Schottky (JBS) diode structure. Schottky diodes manufactured with an MPS design offer advanced surge current capability, lower leakage current and a decreased vulnerability to system surface defects. Accordingly, Wolfspeed’s SiC Schottky diodes have increased surge current capacity, significantly lower levels of reverse leakage, and advanced thermal performance.
The cutting-edge design of these diodes offers reduced system size and weight, which improves the overall performance and reliability of the electronic power system. In contrast to its silicon counterpart, the properties of SiC Schottky diodes prevent excessive leakage current and have much higher forward voltage and reverse voltage ratings. With these advancements, SiC Schottky diodes can operate at high temperatures with little to no effect on the performance of the electronic system. With these devices available for commercial use, they can be used to improve the efficiency of a wider variety of applications.
The power electronic design engineers at Wolfspeed are now on their sixth generation of the SiC Schottky diode structure, which is equipped with the most advanced MPS design. This high-performing design offers power electronic systems with increased reliability, higher breakdown voltage, and enhanced surge capability.
Wolfspeed manufactures the world’s highest quality and most reliable bandgap semiconductors. With more than 14 years of SiC-focused commercial diode experience and more than 25 years of experience with electronic devices, Wolfspeed remains committed to delivering Schottky diodes with higher frequencies, immediate gains in efficiency and lower operating temperatures without requiring additional system modification. Wolfspeed offers SiC Schottky diodes in a variety of current ratings, voltage ratings and package options to meet your application requirements.
