Silicon Carbide and GaN materials enable faster, smaller, lighter and more powerful electronic systems.
Our materials enable devices that power Renewable Energy, Base Stations & Telecom, Traction, Industrial Motor Control, Power Management, and Automotive applications.
Wolfspeed is a fully integrated materials supplier with the largest and most diverse product portfolio serving our global customer base with a broad range of applications. We are the technology commercialization leader with the capacity and scale to bring large diameter wafers and high-quality epitaxy to the market in mass production volumes.
Wolfspeed has long-proven expertise in Silicon Carbide and GaN materials technology advancement with the focus and commitment to bring high-quality solution platforms across all applications.
Silicon Carbide (SiC) MOSFETs fabricated on n-type Silicon Carbide enable higher switching frequencies reduce component sizes of inductors, capacitors, filters & transformers. SiC MOSFETs replace silicon devices with higher blocking voltage, and lower switching and conduction losses.
HEMTs fabricated on GaN epitaxial layers and HPSI Silicon Carbide substrates enable performance far exceeding that of any other technology, for any application with world-beating bandwidth, efficiency and frequency of operation.
Unipolar Schottky diodes fabricated on Silicon Carbide substrates can be used at voltages where Si is restricted to bipolar devices. These unipolar devices have lower switching losses, resulting in more efficient power conversion systems than are capable with silicon diodes.
