Features
- Psat: 300 W
- DE: 75 %
- LSG: 17 dB
- S21: 26 dB
- S11: -5 dB
- S22: -6 dB
- CW operation
WST33H0NC
2.4 - 2.5 GHz, 300W GaN Transistor
Wolfspeed’s WST33H0NC is a 300W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 50V, 0.25um GaN on SiC production process. The WST33H0NC operates from 2.4-2.5 GHz and targets microwave heating applications. Under class-C operation, the WST33H0NC typically achieves 300 W of saturated output power with 14 dB of large signal gain and 75% drain efficiency via a 2.4-2.5 GHz reference design.
Available in a thermally-enhanced, Cu-based package, the WST33H0NC provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next-generation systems.
Products
WST33H0NC
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WST33H0NC
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
WST33H0NC New | Yes | GaN on SiC | 2.4 GHz | 2.5 GHz | 300 W | 17 dB | 75% | 50 V | Packaged Discrete Transistor | Push-Pull |
Benefits
Extremely high efficiency results in lower operating expenses and lower capital expenses.
Applications
- Microwave Heating
- Industrial, Scientific and Medical
Documents, Tools & Support
- Technical & Sales Documents
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Product Catalog | |
| Sales Terms |
Knowledge Center
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