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CGHV1A250F

Wolfspeed RF CGHV1A250F flange package
8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
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Wolfspeed’s CGHV1A250F is a 300 W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing Wolfspeed’s high performance, 50 V, 0.25 um GaN on SiC production process, the CGHV1A250F operates from 8.8 – 9.6 GHz. It targets pulsed radar applications such a marine, defense and weather radar. The CGHV1A250F typically achieves 300 W of saturated output power with 12 dB of large signal gain and 40% drain efficiency under pulsed operation.

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CGHV1A250F

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CGHV1A250F

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV1A250F
New
Yes
GaN on SiC
8.8 GHz
9.6 GHz
300 W
12 dB
40%
50 V
Packaged Discrete Transistor
Flange

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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