Features
- Input matched
- Typical Pulsed CW performance; 1880 MHz; 48 V
- Output power P3dB 45 W
- Efficiency 60.7%
- Gain 21.6 dB
- Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
- RoHS compliant
GTVA220701FA-V1
High Power RF GaN on SiC HEMT 70 W; 50 V; 1805 – 2170 MHz
The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Products
GTVA220701FA-V1
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GTVA220701FA-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA220701FA-V1 | Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 45 W | 19 dB | 27% | 50 V | Earless |
Applications
- Multi-standard Cellular Power Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Reference Designs | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms |
Knowledge Center
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