Features
- GaN on SiC HEMT technology
- Asymmetric Doherty design
- Main: P1dB = 20 W Typ
- Peak: P1dB = 37 W Typ
- Typical pulsed CW performance; 3500 MHz; 48 V
- Output power at P3dB = 50 W
- Gain = 15 dB
- Efficiency = 55%
GTRA360502M-V1
High Power RF GaN on SiC HEMT 50 W; 48 V; 3400 – 3800 MHz
NOTE: Discontinued.
The GTRA360502M is a 50-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally enhanced; overmold package.
Products
GTRA360502M-V1
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GTRA360502M-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRA360502M-V1 | Discontinued | GaN on SiC | 3.4 GHz | 3.8 GHz | 50 W | 15 dB | 55% | 48 V | Surface Mount |
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
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Documents
Document Type | Document Name |
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| Application Notes | |
| Data Sheets | |
| Product Catalog | |
| Sales Terms |
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