Features
- GaN on SiC technology
- Gate bias supplies for main and peaking sub-amplifiers from either side of the device
- Integrated harmonic terminations
- Pb-free and RoHS compliant
- Recommended driver is the WSGPA01
The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum; average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
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WS1A2639-V1-R3K | Yes | GaN on SiC | 2.496 GHz | 2.69 GHz | 50 W | 16.5 dB | 57% | 48 V | Surface Mount |
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