Features
- GaN on SiC technology
- Gate bias supplies for main and peaking sub-amplifiers from either side of the device
- Integrated harmonic terminations
- Pb-free and RoHS compliant
- Recommended driver is the WSGPA01
WS1A3640-V2
39.5 dBm GaN on SiC Power Amplifier Module; 3300-3800 MHz
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
Products
WS1A3640-V2
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WS1A3640-V2
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
WS1A3640-V1-R3K | Yes | GaN on SiC | 3.3 GHz | 3.8 GHz | 60 W | 13.5 dB | 52% | 48 V | Surface Mount |
Applications
- Multi-standard Cellular Power Amplifiers
Documents, Tools & Support
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Documents
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Knowledge Center
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