Features
- GaN on SiC HEMT technology
- Input and output matched
- Typical pulsed CW performance; 4100 MHz; 48 V; 10 µs pulse width; 100 µs PP
- Output power at P3dB = 235 W
- Gain = 10 dB
- Efficiency = 45%
- Capable of handling 10:1 VSWR @48 V; 30 W (WCDMA) output power
- Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant