Features
- Input matched
- Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
- Output power P3dB 300 W
- Efficiency 68.5%
- Gain 17.5 dB
- Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
- Pb-free and RoHS compliant
GTVA212701FA-V2
High Power RF GaN on SiC HEMT 270 W; 48 V; 2110 – 2200 MHz
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced earless package.
Products
GTVA212701FA-V2
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GTVA212701FA-V2
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA212701FA-V2 | Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 300 W | 19 dB | 38% | 48 V | Earless |
Applications
- Multi-standard Cellular Power Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Reference Designs | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms |
Knowledge Center
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