Features
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 350 W
- Efficiency at P3dB = 65%
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant
GTRB204402FC/1-V1
High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Products
GTRB204402FC/1-V1
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GTRB204402FC/1-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRB204402FC/1-V1 | Yes | GaN on SiC | 1.93 GHz | 2.02 GHz | 350 W | 16.3 dB | 58% | 48 V | Earless |
Applications
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Knowledge Center
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