Features
- Input matched
- Typical pulsed CW performance: 2690 MHz; 48 V; combined outputs
- Output power at P3dB 370 W
- Efficiency 70%
- Gain 15 dB
- Capable of handling 10:1 VSWR @48 V; 56 W (CW) output power
- Low thermal resistance
- Pb-free and RoHS compliant
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
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GTRA263902FC-V2 | Yes | GaN on SiC | 2.495 GHz | 2.69 GHz | 370 W | 13.8 dB | 54% | 48 V | Earless |
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Application Notes | |
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Reference Designs | |
Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Product Catalog | |
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Sales Terms |