The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRA364002FC-V1 | Yes | GaN on SiC | 3.3 GHz | 3.9 GHz | 400 W | 13 dB | 40% | 48 V | Earless |
Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Reference Designs | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms |
