The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching; high efficiency; and a thermally-enhanced package with earless flange.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRA384802FC-V1 | Yes | GaN on SiC | 3.6 GHz | 3.8 GHz | 400 W | 13 dB | 42% | 48 V | Earless |
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Product Catalog | |
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