Features
- GaN on SiC HEMT technology
- Broadband internal matching
- Typical pulsed CW performance: 10 μs pulse width; 10% duty cycle; 2675 MHz; 48 V; Doherty fixture
- Gain = 15 dB @ 47.2 dBm
- Efficiency = 53% @ 47.2 dBm
- Output power at P3dB = 400 W
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant