PTRA094808NF-V1

High Power RF LDMOS FET 480 W; 48 V; 859 – 960 MHz

The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Products

PTRA094808NF-V1

No filters selected, showing all 1 products

PTRA094808NF-V1

Product SKU	Buy Online	Data Sheet	Recommended For New Design?	Technology	Frequency Min	Frequency Max	P3dB Output Power	Gain	Efficiency	Operating Voltage	Package Type
PTRA094808NF-V1			Yes	LDMOS	0.5 GHz	1 GHz	420 W	17.5 dB	53%	48 V	Plastic

Features

Broadband internal input and output matching
Asymmetrical design: Main P1dB = 210 W Typ; Peak P1dB = 340 W Typ
Typical Pulsed CW performance; 896 MHz; 48 V; Doherty configuration: Output power at P1dB = 300 W; Output power at P3dB = 420 W; Efficiency = 53%; Gain = 17.5 dB
Capable of handling 10:1 VSWR @ 48 V; 100 W (CW) output power
Integrated ESD protection
Pb-free and RoHS compliant

Applications

Multi-standard Cellular Power Amplifiers

Documents, Tools & Support

Technical & Sales Documents
Tools & Support
Compliance

Documents

Document Type	Document Name
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms

Buy OnlineFind a Distributor

Knowledge Center

View All

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading Technical Articles

Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Continue Reading Technical Articles

Power

Silicon Carbide

SiC vs GaN vs Si: Find The Right Fit For Your Application

Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.

Continue Reading Infographic

PTRA094808NF-V1

Products

PTRA094808NF-V1

PTRA094808NF-V1

Documents, Tools & Support

Documents

Knowledge Center

.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Thermal Considerations for High-Power GaN RF Amplifiers

Thermal Considerations for High-Power GaN RF Amplifiers