Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 3800 MHz, 48 V, 100 μs, pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 450 W
- Efficiency at P3dB = 61%
- Human Body Model Class 1C (per ANSI/ESDA/JEDECJS-001)
- Pb-free and RoHS compliant