Features
- GaN on SiC HEMT technology
- Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2200 MHz, 48 V, Doherty fixture
- Efficiency = 65%
- Gain = 14 dB
- Output power at P3dB = 450 W
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant