Features
Typical Pulsed CW performance, 960 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P4dB = 900 W
- Efficiency at P4dB = 73%
The GTRB097152FC is a 900-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
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GTRB097152FC-V1 New | Yes | GaN on SiC | 0.758 GHz | 0.96 GHz | 450 W | 18 dB | 59% | 48 V | Earless |
Typical Pulsed CW performance, 960 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
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