The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRB206002FC/1-V1 | Yes | GaN on SiC | 1.93 GHz | 2.02 GHz | 500 W | 14.8 dB | 53% | 48 V | Earless |
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