The GTRB186002FC is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRB186002FC-V1 | Yes | GaN on SiC | 1.805 GHz | 1.88 GHz | 500 W | 15.7 dB | 54% | 48 V | Earless |
Document Type | Document Name |
|---|---|
| Application Notes | |
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms |
