The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in Doherty cellular power amplifier applications. It features high linearized efficiency across 2496 MHz to 2690 MHz operating frequency band and a thermally-enhanced packaged with earless flange.
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
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GTRB267008FC-V1 New | Yes | GaN on SiC | 2.496 GHz | 2.69 GHz | 620 W | 14 dB | 52% | 48 V | Earless |
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