(中文) GaN on SiC solutions for C-Band applications

C-Band

产品SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA0060002F1-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Evaluation Board	Flange
CMPA0060002F1	Yes	GaN on SiC	DC	6 GHz	2 W	18 dB	25%	28 V	Packaged MMIC	Flange
CMPA0060002F-AMP	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	23%	28 V	Evaluation Board	Flange
CMPA0060002F	Yes	GaN on SiC	DC	6 GHz	2 W	17 dB	23%	28 V	Packaged MMIC	Flange
CGHV1F006S-AMP1	Yes	GaN on SiC	5.85 GHz	7.2 GHz	6 W	>7 dB	52%	40 V	Evaluation Board	Surface Mount
CGHV1F006S	Yes	GaN on SiC	DC	15 GHz	6 W	>7 dB	52%	40 V	Packaged Discrete Transistor	Surface Mount
CGH40006S-AMP1	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Surface Mount
CGH40006P-AMP	Yes	GaN on SiC	2 GHz	6 GHz	6 W	>11 dB	65%	28 V	Evaluation Board	Pill
CGH40006S	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Plastic
CGH40006P	Yes	GaN on SiC	DC	6 GHz	6 W	>11 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGHV1J006D-GP4	Yes	GaN on SiC	DC	18 GHz	6 W	17 dB	60%	40 V	Discrete Bare Die	Die
CG2H40010F-AMP	Yes	GaN on SiC	3.5 GHz	3.9 GHz	10 W	>16 dB	65%	28 V	Evaluation Board	Flange
CG2H40010F	Yes	GaN on SiC	DC	6 GHz	10 W	>16 dB	65%	28 V	Packaged Discrete Transistor	Flange
CGH40010F	No	GaN on SiC	DC	6 GHz	10 W	>14 dB	65%	28 V	Packaged Discrete Transistor	Flange
CG2H40010P	Yes	GaN on SiC	DC	6 GHz	10 W	>16 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH40010P	No	GaN on SiC	DC	6 GHz	10 W	>14 dB	65%	28 V	Packaged Discrete Transistor	Pill
CGH55015F2-AMP	Yes	GaN on SiC	5.4 GHz	5.9 GHz	10 W	12 dB	60%	28 V	Evaluation Board	Flange
CGH55015P2	No	GaN on SiC	DC	6 GHz	10 W	12 dB	60%	28 V	Packaged Discrete Transistor	Pill
CGH55015F2	Yes	GaN on SiC	DC	6 GHz	10 W	12 dB	60%	28 V	Packaged Discrete Transistor	Flange
CGHV27015S	Yes	GaN on SiC	DC	6 GHz	15 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CG2H80015D-GP4	Yes	GaN on SiC	DC	8 GHz	15 W	>12 dB	70%	28 V	Discrete Bare Die	Die
CMPA0060025F1-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F1	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CGHV1F025S	Yes	GaN on SiC	DC	15 GHz	25 W	11 dB	51%	40 V	Packaged Discrete Transistor	Surface Mount
CMPA601C025F-AMP	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Evaluation Board	Flange
CG2H40025F-AMP	Yes	GaN on SiC	3.4 GHz	3.8 GHz	25 W	>15 dB	62%	28 V	Evaluation Board	Flange
CMPA601C025F	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Packaged MMIC	Flange
CMPA2560025F	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Packaged MMIC	Flange
CG2H40025F	Yes	GaN on SiC	DC	6 GHz	25 W	>15 dB	62%	28 V	Packaged Discrete Transistor	Flange
CMPA2560025F-AMP	Yes	GaN on SiC	2.5 GHz	6 GHz	25 W	24 dB	31%	28 V	Evaluation Board	Flange
CMPA0060025F-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CGH40025P	No	GaN on SiC	DC	6 GHz	25 W	>13 dB	62%	28 V	Packaged Discrete Transistor	Pill
CG2H40025P	Yes	GaN on SiC	DC	6 GHz	25 W	>15 dB	64%	28 V	Packaged Discrete Transistor	Pill
CGH40025F	No	GaN on SiC	DC	6 GHz	25 W	>13 dB	62%	28 V	Packaged Discrete Transistor	Flange
CGHV1J025D-GP4	Yes	GaN on SiC	DC	18 GHz	25 W	17 dB	60%	40 V	Discrete Bare Die	Die
CMPA0060025F	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CMPA601C025D	Yes	GaN on SiC	6 GHz	12 GHz	25 W	32 dB	32%	28 V	MMIC Bare Die	Die
CGHV27030S	Yes	GaN on SiC	DC	6 GHz	30 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CGHV40030F	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Flange
CGH55030P1	Yes	GaN on SiC	DC	6 GHz	30 W	10 dB	25%	28 V	Packaged Discrete Transistor	Pill
CGHV40030P	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Pill
CG2H80030D-GP4	Yes	GaN on SiC	DC	8 GHz	30 W	16.5 dB	65%	28 V	Discrete Bare Die	Die
CGH55030F1	Yes	GaN on SiC	DC	6 GHz	30 W	10 dB	25%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA2060035F-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Evaluation Board	Flange
CG2H40035F-AMP	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Evaluation Board	Flange
CG2H40035F	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	28 V	Packaged MMIC	Flange
CGH40035F	No	GaN on SiC	DC	6 GHz	35 W	>13 dB	60%	28 V	Packaged Discrete Transistor	Flange
CMPA2060035F-AMP1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	27 dB	35%	32 V	Evaluation Board	Flange
CG2H40035P	Yes	GaN on SiC	DC	6 GHz	35 W	14 dB	64%	28 V	Packaged Discrete Transistor	Pill
CMPA2060035D	Yes	GaN on SiC	2 GHz	6 GHz	35 W	29 dB	42%	28 V	MMIC Bare Die	Die
CMPA5259025S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	40 W	25 dB	54%	28 V	Packaged MMIC	Plastic
CGHV60040D-GP4	Yes	GaN on SiC	DC	6 GHz	40 W		65%	50 V	Discrete Bare Die	Die
CG2H80045D-GP4	Yes	GaN on SiC	DC	8 GHz	45 W	15 dB	65%	28 V	Discrete Bare Die	Die
CMPA5259050F-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CMPA5259050S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	50%	28 V	Packaged MMIC	Surface Mount
CMPA5259050F-AMP	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Evaluation Board	Flange
CMPA5259050F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CG2H80060D-GP4	Yes	GaN on SiC	DC	8 GHz	60 W	>12 dB	70%	28 V	Discrete Bare Die	Die
CGHV59070F-AMP	Yes	GaN on SiC	4.8 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Evaluation Board	Flange
CGHV59070F	Yes	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Packaged Discrete Transistor	Flange
CGHV1J070D-GP4	Yes	GaN on SiC	DC	18 GHz	70 W	17 dB	60%	40 V	Discrete Bare Die	Die
CGHV59070P	Yes	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Packaged Discrete Transistor	Pill
CGHV60075D5-GP4	Yes	GaN on SiC	DC	6 GHz	75 W	>7 dB	65%	50 V	Discrete Bare Die	Die
CMPA851A050S New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	Packaged MMIC	Surface Mount
CMPA5259080S-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	80 W	22 dB	44%	40 V	Packaged MMIC	Surface Mount
CMPA5259080S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	80 W	22 dB	44%	40 V	Packaged MMIC	Surface Mount
CG2H80120D-GP4	Yes	GaN on SiC	DC	8 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
CGHV59350F-AMP2	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Evaluation Board	Flange
CGHV59350F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV59350P	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Packaged Discrete Transistor	Pill

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Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Improving Pulse Fidelity in RF Power Amplifiers

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.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Thermal Considerations for High-Power GaN RF Amplifiers

Thermal Considerations for High-Power GaN RF Amplifiers