所有航空航天与国防

所有航空航天与国防

数十年来，Wolfspeed 一直推动射频技术的进步发展，并成为商用和军用航空、空中交通管制、天气服务、飞行器到卫星的通信、太空探索等领域无线通信和雷达系统的核心技术。Wolfspeed的创新，包括了突破性碳化硅基氮化镓研发、完全整合的设计支持、以及定制组装等。所有这些创新都助力 Wolfspeed 不断地为客户提供在尺寸、重量和功率方面具有显著优势的解决方案。我们可作为完整的射频系统设计合作伙伴，为您提供碳化硅基氮化镓（已封装和裸芯片）和 LDMOS 器件丰富产品组合。

产品SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA1D1J001S-AMP1 New	Yes	GaN on SiC	12.7 GHz	18 GHz	1 W	23 dB	30%	28 V	Packaged MMIC	Surface Mount
CMPA1D1J001S New	Yes	GaN on SiC	12.7 GHz	18 GHz	1 W	23 dB	30%	28 V	Packaged MMIC	Surface Mount
CMPA0530002S-AMP1	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CMPA0530002S	Yes	GaN on SiC	0.5 GHz	3 GHz	2 W	18 dB	52%	28 V	Packaged MMIC	Surface Mount
CGH60008D-GP4	Yes	GaN on SiC	DC	6 GHz	8 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CMPA0560008S New	Yes	GaN on SiC	0.5 GHz	6 GHz	10 W	19 dB	40%	28 V	Packaged MMIC	Surface Mount
CMPA2735015S	Yes	GaN on SiC	2.7 GHz	3.5 GHz	15 W	33 dB	50%	50 V	Packaged MMIC	Plastic
CMPA601J025F New	Yes	GaN on SiC	6 GHz	18 GHz	25 W	20 dB	20%	28 V	Packaged MMIC	Flange
CMPA0760020F New	Yes	GaN on SiC	0.7 GHz	6 GHz	25 W	21 dB	36%	28 V	Packaged MMIC	Flange
CMPA2735030S	Yes	GaN on SiC	2.7 GHz	3.5 GHz	30 W	32 dB	45%	50 V	Discrete Bare Die	Surface Mount
CMPA5585030F-AMP	Yes	GaN on SiC	5.5 GHz	8.5 GHz	30 W	25 dB	30%	28 V	Evaluation Board	Flange
CMPA5585030F	Yes	GaN on SiC	5.5 GHz	8.5 GHz	30 W	25 dB	30%	28 V	Packaged MMIC	Flange
CMPA901A020S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	30 dB	45%	28 V	Packaged MMIC	Plastic
CMPA2060035F1-AMP	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Evaluation Board	Flange
CMPA9396025S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	45%	40 V	Evaluation Board	Plastic
CMPA2060035F1	Yes	GaN on SiC	2 GHz	6 GHz	35 W	30 dB	30%	28 V	Packaged MMIC	Flange
CMPA801B030F1	Yes	GaN on SiC	8 GHz	12 GHz	35 W	19 dB	36%	28 V	Packaged MMIC	Flange
CMPA901A035F1	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	38%	28 V	Packaged MMIC	Flange
CMPA5259025S	Yes	GaN on SiC	5.2 GHz	5.9 GHz	40 W	25 dB	54%	28 V	Packaged MMIC	Plastic
CMPA801B030D1	Yes	GaN on SiC	8 GHz	11 GHz	40 W	28 dB	42%	28 V	MMIC Bare Die	Die
CMPA901A035F-AMP	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Evaluation Board	Flange
CMPA901A035F	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Packaged MMIC	Flange
CMPA1842040F	Yes	GaN on SiC	1.8 GHz	4.2 GHz	45 W	24 dB	45%	28 V	MMIC Bare Die	Flange
CMPA1842040D	Yes	GaN on SiC	1.8 GHz	4.2 GHz	45 W	25 dB	45%	28 V	MMIC Bare Die	Die
CMPA851A050F New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	50 W	29 dB		28 V	Packaged MMIC	Flange
CMPA5259050F-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	54%	28 V	Packaged MMIC	Flange
CGHV96050F2-AMP	Yes	GaN on SiC	8.4 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Evaluation Board	Flange
CGHV96050F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Packaged Discrete Transistor	Flange
CMPA1F1H060F New	Yes	GaN on SiC	15.4 GHz	17.7 GHz	60 W	25 dB		28 V	Packaged MMIC	Flange
CMPA5259050D1 New	Yes	GaN on SiC	5 GHz	5.9 GHz	60 W	23 dB	50%	28 V	MMIC Bare Die	Die
CMPA1H1J050F-AMP New	Yes	GaN on SiC	17.3 GHz	18.4 GHz	60 W	25 dB	30%	28 V	Evaluation Board	Flange
CMPA1H1J050F New	Yes	GaN on SiC	17.3 GHz	18.4 GHz	60 W	25 dB	30%	28 V	Packaged MMIC	Flange
CGHV59070F-AMP	Yes	GaN on SiC	4.8 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Evaluation Board	Flange
CGHV59070F	Yes	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	50%	50 V	Packaged Discrete Transistor	Flange
CMPA2735075F1	Yes	GaN on SiC	2.7 GHz	3.5 GHz	75 W	29 dB	57%	28 V	Packaged MMIC	Flange
CMPA1F1H060S New	Yes	GaN on SiC	15.4 GHz	17.7 GHz	80 W	25 dB		28 V	Packaged MMIC	Plastic
CMPA1F1H060D New	Yes	GaN on SiC	15.4 GHz	17.7 GHz	80 W	26 dB		28 V	MMIC Bare Die	Die
CMPA851A050S New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	Packaged MMIC	Surface Mount
CMPA851A050D New	Yes	GaN on SiC	8.5 GHz	10.5 GHz	80 W	29 dB		28 V	MMIC Bare Die	Die
CMPA5259080S-AMP1	Yes	GaN on SiC	5.2 GHz	5.9 GHz	80 W	22 dB	44%	40 V	Packaged MMIC	Surface Mount
CMPA2738060F-AMP	Yes	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	54%	50 V	Evaluation Board	Flange
CMPA2738060F	Yes	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	54%	50 V	Packaged MMIC	Flange
CMPA1C1D080F	No	GaN on SiC	12.75 GHz	13.25 GHz	90 W	25 dB	30%	40 V	Packaged MMIC	Flange
CMPA5259100S New	Yes	GaN on SiC	5 GHz	5.9 GHz	100 W	25 dB		50 V	Packaged MMIC	Surface Mount
CGHV96100F2-AMP	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Evaluation Board	Flange
CGHV96100F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Packaged Discrete Transistor	Flange
CG2H80120D-GP4	Yes	GaN on SiC	DC	8 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGH60120D-GP4	No	GaN on SiC	DC	6 GHz	120 W	>12 dB	65%	28 V	Discrete Bare Die	Die
CGHV35120F	Yes	GaN on SiC	3.1 GHz	3.5 GHz	120 W	12.8 dB	62%	50 V	Packaged Discrete Transistor	Flange
CGHV96130F	Yes	GaN on SiC	8.4 GHz	9.6 GHz	130 W		42%	40 V	Packaged Discrete Transistor	Flange
CMPA2935150S-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CMPA2935150S	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W				Packaged MMIC
CGHV35150F-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	50%		Evaluation Board	Flange
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
CGH35240F-AMP	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGH35240F	Yes	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	57%	28 V	Packaged Discrete Transistor	Flange
CGHV14250F	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Packaged Discrete Transistor	Flange
CGHV14250P	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Packaged Discrete Transistor	Pill
CGHV14250F-AMP	Yes	GaN on SiC	DC	1.6 GHz	250 W	18 dB	77%	50 V	Evaluation Board	Flange
WST33H0NC New	Yes	GaN on SiC	2.4 GHz	2.5 GHz	300 W	17 dB	75%	50 V	Packaged Discrete Transistor	Push-Pull
CGHV40320D-GP4	Yes	GaN on SiC	DC	4 GHz	320 W	19 dB	65%	50 V	Discrete Bare Die	Die
CGHV59350F-AMP2	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Evaluation Board	Flange
PTVA123501FC-V1	Yes	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	55%	50 V	Packaged Discrete Transistor	Earless
PTVA123501EC-V2	Yes	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	55%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV59350F	Yes	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV38375F	Yes	GaN on SiC	2.75 GHz	3.75 GHz	400 W	>10 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV35400F-AMP	Yes	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	60%	50 V	Evaluation Board	Flange
PTVA104501EH-V1	Yes	LDMOS	0.96 GHz	1.215 GHz	450 W	17.5 dB	58%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV31500F1-AMP	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Evaluation Board	Flange
CGHV31500F1	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	13 dB	>65%	50 V	Packaged Discrete Transistor	Flange
CGHV35400F1	Yes	GaN on SiC	2.9 GHz	3.5 GHz	500 W	12 dB	60%	50 V	Packaged Discrete Transistor	Flange
CGHV31500F-AMP	Yes	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	60%	50 V	Evaluation Board	Flange
CGHV14500F-AMP	Yes	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	68%	50 V	Evaluation Board	Flange
GTVA126001EC-V1	Yes	GaN on SiC	1.2 GHz	1.4 GHz	600 W	20 dB	63%	50 V	Packaged Discrete Transistor	Bolt Down
GTVA107001FC-V1	Yes	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	70%	50 V	Packaged Discrete Transistor	Earless
GTVA107001EC-V1	Yes	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	70%	50 V	Packaged Discrete Transistor	Bolt Down
PTVA127002EV-V1	Yes	LDMOS	1.2 GHz	1.4 GHz	700 W	16 dB	56%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV14800F1 New	Yes	GaN on SiC	0.9 GHz	1.4 GHz	800 W	15 dB	65%	50 V	Packaged Discrete Transistor	Flange
CGHV14800F-AMP	Yes	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	65%	50 V	Evaluation Board	Flange
CGHV14800F	Yes	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	65%	50 V	Packaged Discrete Transistor	Flange
PTVA101K02EV-V1	Yes	LDMOS	1.03 GHz	1.09 GHz	900 W	18 dB	65%	50 V	Packaged Discrete Transistor	Bolt Down
LTN/GTVA101K42EV-V1	Yes	GaN on SiC	0.96 GHz	1.4 GHz	1400 W	17 dB	68%	50 V	Packaged Discrete Transistor	Bolt Down
GTVA101K42EV-V1	Yes	GaN on SiC	0.96 GHz	1.4 GHz	1400 W	17 dB	68%	50 V	Packaged Discrete Transistor	Bolt Down

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.

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Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Improving Pulse Fidelity in RF Power Amplifiers

所有航空航天与国防

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.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Thermal Considerations for High-Power GaN RF Amplifiers

Thermal Considerations for High-Power GaN RF Amplifiers